View 2SC5546_300648.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Power Transistors
2SC5546
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0)
15.50.5
3.20.1 5
3.00.3 5
26.50.5
(23.4)
5 5 5 0.70.1
I Features
* High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switching * Wide area of safe operation (ASO)
(4.5)
(2.0)
18.60.5 (2.0) Solder Dip
(4.0) 2.00.2 1.10.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 18 8 70 3.5 150 -55 to +150 C C Unit V V V V A A A W
5.450.3 10.90.5
3.30.3
5
1
2
3
5.50.3
1: Base 2: Collector 3: Emitter TOP-3E Package
Marking Symbol: C5546 Internal Connection
C B
Junction temperature Storage temperature
(2.0)
E
I Electrical Characteristics TC = 25C 3C
Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 10 A, IB = 2.5 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 10 A, Resistance loaded IB1 = 2.5 A, IB2 = -5.0 A 3 3.0 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz s s Unit A mA A
22.00.5
(1.2)
1

▲Up To Search▲

Price & Availability of 2SC5546

	To Download 2SC5546 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .